Bor Wen Lai
|關鍵字:||磁控射頻濺鍍法;五氧化二鉭;超薄;介電薄膜;magnetron rf sputtering;tantalumj oxide;ultra thin;dielectric thin film|
Crystalline and amorphous ultra thin (Ta2O5)1-x(TiO2)x films were prepared by magnetron rf sputtering in this study. The amorphous films thickness, varying from 14 Å to 160 Å obtained by n&k and TEM measurements, shows a linear increase with deposition time and indicates an incubation time of around 5 seconds. The physical and electrical properties of the dielectric films, sandwiched in a MIM structure with Pt and IrO2 as bottom electrode and Al as top electrode, were investigated. The leakage current, dielectric behavior and surface morphology of the films deposited and subsequently annealed at various temperatures were measured and their correlations were studied. For typical amorphous films of thickness 50 Å, the leakage current density under an field of 1MV/cm is 1*10-6(A/cm2) and its dielectric constant increases with the annealing temperature. For crystalline films of 90 Å, the leakage current density under the same field is 5*10-6 (A/cm2). The charge transport in the former follows the Schottky Emission model, and Poole-Frenkel model in the latter.
|Appears in Collections:||Thesis|