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dc.contributor.authorTsai, WCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorFang, FFen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorHuang, CFen_US
dc.date.accessioned2014-12-08T15:01:55Z-
dc.date.available2014-12-08T15:01:55Z-
dc.date.issued1997-03-15en_US
dc.identifier.issnen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.L323en_US
dc.identifier.urihttp://hdl.handle.net/11536/665-
dc.description.abstractIn this study, high-quality Si/Si1-xGex/Si p-type modulation-doped heterostructures were grown by ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). High-field magnetotransport measurements revealed Shubnikov-de Hass oscillations in the longitudinal magneto resistance and the integer quantum Hall effect in transverse magnetoresistance illustrating the presence of a well-confined two-dimensional hole gas. The mobilities of the two-dimensional hole gas, as high as 12500 cm(2)/V . s at 0.65 K, were obtained for normal (doped layer at surface side) modulation-doped heterostructures with x = 0.12 at a sheet carrier concentration of 3.45 x 10(11) cm(-2). In addition, for this heterostructure, temperature-dependent measurements of Shubnikov-de Hass oscillations in the range 0.65 K-2.4 K were taken and the hole effective mass of 0.295m(0) + 0.01m(0) was obtained.en_US
dc.language.isoen_USen_US
dc.subjectmodulation-doped heterostructureen_US
dc.subjectShubnikov de Hass oscillationen_US
dc.subjectquantum Hall effecten_US
dc.subjecttwo-dimension hole gasen_US
dc.subjecthole effective massen_US
dc.titleVery high hole mobility in p-type Si/SiGe modulation-doped heterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.L323en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue3Ben_US
dc.citation.spageL323en_US
dc.citation.epageL326en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WU03500004-
dc.citation.woscount2-
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