標題: Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
作者: Chen, Wei-Chen
Lin, Horng-Chih
Chang, Yu-Chia
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Sep-2009
摘要: A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238362]
URI: http://dx.doi.org/10.1063/1.3238362
http://hdl.handle.net/11536/6652
ISSN: 0003-6951
DOI: 10.1063/1.3238362
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 13
結束頁: 
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