標題: Very high hole mobility in p-type Si/SiGe modulation-doped heterostructures
作者: Tsai, WC
Chang, CY
Huang, GW
Fang, FF
Chang, YH
Huang, CF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: modulation-doped heterostructure;Shubnikov de Hass oscillation;quantum Hall effect;two-dimension hole gas;hole effective mass
公開日期: 15-三月-1997
摘要: In this study, high-quality Si/Si1-xGex/Si p-type modulation-doped heterostructures were grown by ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). High-field magnetotransport measurements revealed Shubnikov-de Hass oscillations in the longitudinal magneto resistance and the integer quantum Hall effect in transverse magnetoresistance illustrating the presence of a well-confined two-dimensional hole gas. The mobilities of the two-dimensional hole gas, as high as 12500 cm(2)/V . s at 0.65 K, were obtained for normal (doped layer at surface side) modulation-doped heterostructures with x = 0.12 at a sheet carrier concentration of 3.45 x 10(11) cm(-2). In addition, for this heterostructure, temperature-dependent measurements of Shubnikov-de Hass oscillations in the range 0.65 K-2.4 K were taken and the hole effective mass of 0.295m(0) + 0.01m(0) was obtained.
URI: http://dx.doi.org/10.1143/JJAP.36.L323
http://hdl.handle.net/11536/665
ISSN: 
DOI: 10.1143/JJAP.36.L323
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 36
Issue: 3B
起始頁: L323
結束頁: L326
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WU03500004.pdf