標題: Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistors
作者: Li, Yiming
Chen, Ying-Chieh
Hwang, Chih-Hong
傳播研究所
電子工程學系及電子研究所
Institute of Communication Studies
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Oct-2009
摘要: The speed of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) has been dramatically increased. It is known that the speed of HBTs is dominated by the base transit time, which could be influenced by the doping profile in the base region and the Ge concentration. In this study, the design of the doping profile and Ge-dose concentration for SiGe HBTs are mathematically formulated and solved by a technique of geometric programming ( GP). The solution calculated by the GP method is guaranteed to be a global optimal. The accuracy of the adopted numerical optimization technique is first confirmed by comparing with two-dimensional device simulation. The result of this study shows that a 23% Ge fraction may maximize the current gain; furthermore, a 12.5% Ge may maximize the cut-off frequency for the explored device, where a 254 GHz cut-off frequency is achieved.
URI: http://dx.doi.org/10.1088/0268-1242/24/10/105020
http://hdl.handle.net/11536/6642
ISSN: 0268-1242
DOI: 10.1088/0268-1242/24/10/105020
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 24
Issue: 10
結束頁: 
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