標題: On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose
作者: Lee, Wei
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ballistic transport;channel backscattering;CMOSFET;process monitoring
公開日期: 1-十月-2009
摘要: This paper reports a generalized temperature-dependent channel backscattering extraction method that can self-consistently determine the temperature sensitivity of the low-field mobility and the critical length in nanoscale MOSFETs. Through comparing the gate voltage and temperature dependence, we have shown that assuming constant temperature sensitivity of the low-field mobility and the critical length will result in unphysical backscattering characteristics. We have also investigated the limitation in this self-consistent method and proposed guidelines for experimental extraction. Our results show that channel backscattering is increased for NMOSFETs with higher body doping and HfO(2) dielectric and can be reduced for PMOSFETs when the process-induced uniaxial compressive strain technology is employed. This paper indicates that the self-consistent temperature-dependent method is competent to be routinely used in technology development for the process monitoring purpose.
URI: http://dx.doi.org/10.1109/TED.2009.2028376
http://hdl.handle.net/11536/6637
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2028376
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 10
起始頁: 2285
結束頁: 2290
顯示於類別:期刊論文


文件中的檔案:

  1. 000270036300015.pdf