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dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorHsiao, Shih-Kuangen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorHsiao, Yu-Linen_US
dc.contributor.authorHuang, Jui-Chienen_US
dc.contributor.authorLu, Chung-Yuen_US
dc.contributor.authorChang, Huang-Choungen_US
dc.contributor.authorCheng, Kai-Wenen_US
dc.contributor.authorLee, Ching-Tingen_US
dc.date.accessioned2014-12-08T15:08:37Z-
dc.date.available2014-12-08T15:08:37Z-
dc.date.issued2009-10-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2026728en_US
dc.identifier.urihttp://hdl.handle.net/11536/6615-
dc.description.abstractThis letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape-patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.en_US
dc.language.isoen_USen_US
dc.subjectEdge threading dislocationsen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectpatterned sapphireen_US
dc.subjectsubmicrometeren_US
dc.title460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2009.2026728en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue19en_US
dc.citation.spage1366en_US
dc.citation.epage1368en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000269774800004-
dc.citation.woscount15-
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