標題: 460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
作者: Chang, Chia-Ta
Hsiao, Shih-Kuang
Chang, Edward Yi
Hsiao, Yu-Lin
Huang, Jui-Chien
Lu, Chung-Yu
Chang, Huang-Choung
Cheng, Kai-Wen
Lee, Ching-Ting
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Edge threading dislocations;light-emitting diodes (LEDs);patterned sapphire;submicrometer
公開日期: 1-Oct-2009
摘要: This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape-patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.
URI: http://dx.doi.org/10.1109/LPT.2009.2026728
http://hdl.handle.net/11536/6615
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2026728
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 19
起始頁: 1366
結束頁: 1368
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