Title: Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide
Authors: Yeh, CF
Chen, TJ
Kao, JS
Department of Electronics Engineering and Institute of Electronics
Issue Date: 24-Mar-1997
Abstract: The effects of N-2 annealing on the physical properties of room-temperature-deposited ion plating (IF) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed by N-2 annealing depending on the annealing temperature. After annealing at 800 degrees C, the physical characteristics of IP oxide are comparable to those of thermal oxide. (C) 1997 American Institute of Physics.
URI: http://hdl.handle.net/11536/659
ISSN: 0003-6951
Volume: 70
Issue: 12
Begin Page: 1611
End Page: 1613
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