The Study of Doped AlGaInP Alloys: Material Growth and Defect Analysis
|關鍵字:||磷化鋁鎵銦;深能階缺陷;深能階暫態量測法;碲;鎂;摻雜;磷空缺;有機金屬氣相磊晶法;AlGaInP;deep level defect;DLTS;Te;Mg;doped;phosphorous vacancy;OMVPE|
The AlGaInP alloys are widely used in optoelectron devices. Because the deep level defects could be a recombination center, the device efficiencies will significantly reduce if the defects exist in the AlGaInP devices. The information of the deep level defects in the Te- and Mg-doped AlGaInP are very limited. Thus, we widely study the defects in the Te- and Mg-doped AlGaInP in the thesis. We grew doped AlGaInP alloys by the OMVPE technique and used the DLTS to explore the defects in AlGaInP alloys. The phosphorus vacancies are the native defects in AlInP grown by MOCVD. We also used the DLTS to study the relationship between the V/III mole ratio and defects as phosphorous vacancies in the thesis. Two new deep level traps were found in the Te-doped AlInP. One is a majority-carrier trap while the other is a minority-carrier trap. The activation energies of those traps are 0.24eV and 0.25eV respectively. Both are dopant related defects and are bulk defects, rather than interface defects. A new majority trap was found in Te-doped AlGaInP alloy herein. The activation energy of this trap is 0.13eV, and the trap concentration strongly depends on the Al composition. This trap is undetectable at AlInP and GaInP. The concentration of the trap, which was found in the Te-doped AlInP layer, is undetectable when the Al composition is below half i.e. x < 0.5. A phosphorous vacancy related trap had been found in the Te-doped AlInP. The trap is a majority-carrier trap and is a kind of bulk defect, rather than an interface defect. The activation energy of this trap is 0.65eV. Two new deep level traps were found in the Mg-doped AlInP. Both are minority-carrier traps. The activation energies of those traps are 0.19eV and 0.514eV, respectively. Both are dopant related defects and are bulk defects rather than being interface defects.
|Appears in Collections:||Thesis|