Title: Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature
Authors: Li, Yiming
Hwang, Chih-Hong
Yu, Shao-Ming
Huang, Hsuan-Ming
Yeh, Ta-Ching
Cheng, Hui-Wen
Chen, Hung-Ming
Hwang, Jiunn-Ren
Yang, Fu-Liang
電信工程研究所
Institute of Communications Engineering
Issue Date: 2007
Abstract: In this paper, we numerically study the discrete-dopant-induced characteristic fluctuations in 16nnn silicon-on-insulator (SOI) FinFETs. For devices under different temperature condition, discrete dopants are statistically generated and positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Electrical characteristics' fluctuations are growing worse when the substrate temperature increases, the standard deviation of threshold voltage increases 1.75 times when substrate temperature increases from 300K to 400K for example. This "atomistic" device simulation technique is computationally cost-effective and provides us an insight into the problem of discrete-dopant-induced fluctuation and the relation between the fluctuation and thermal effect.
URI: http://hdl.handle.net/11536/6579
http://dx.doi.org/10.1007/978-3-211-72861-1_88
ISBN: 978-3-211-72860-4
DOI: 10.1007/978-3-211-72861-1_88
Journal: SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007
Begin Page: 365
End Page: 368
Appears in Collections:Conferences Paper


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