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dc.contributor.authorTsai, Chun-Ien_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorWang, Chiu-Yenen_US
dc.contributor.authorWu, Han-Weien_US
dc.contributor.authorChen, Uei-Shinen_US
dc.contributor.authorLu, Ming-Yenen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Lih-Juannen_US
dc.contributor.authorWang, Zhong-Linen_US
dc.date.accessioned2014-12-08T15:08:33Z-
dc.date.available2014-12-08T15:08:33Z-
dc.date.issued2009-10-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cg900531xen_US
dc.identifier.urihttp://hdl.handle.net/11536/6578-
dc.description.abstractCobalt silicide nanostructures have been synthesized by a spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. The effects of two main parameters on the growth of nanostructures were discussed. The phases formed were determined by the Gibbs free energy changes in the reactions. Various phases (CoSi, Co(2)Si) and morphologies, such as single-stern nanowires, three-dimensional (3D) nanowire networks, and aloelike nanostructures, have been synthesized. Very low turn-on field (1.42 V/mu m) and good conductance obtained from field-emission and electrical property measurements, respectively, indicate that CoSi nanowires are potentially useful for electronic devices.en_US
dc.language.isoen_USen_US
dc.titleCobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cg900531xen_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume9en_US
dc.citation.issue10en_US
dc.citation.spage4514en_US
dc.citation.epage4518en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000270461400046-
dc.citation.woscount24-
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