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dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorYu, Wen-Chienen_US
dc.contributor.authorHuang, Jian-Daen_US
dc.contributor.authorWang, Yi-Chaoen_US
dc.contributor.authorChen, Ching-Weien_US
dc.contributor.authorWang, Chao-Keien_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorCho, An-Thungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorDai, Bau-Tongen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:08:33Z-
dc.date.available2014-12-08T15:08:33Z-
dc.date.issued2009-10-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3240888en_US
dc.identifier.urihttp://hdl.handle.net/11536/6573-
dc.description.abstractWe show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240888]en_US
dc.language.isoen_USen_US
dc.titleNonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silicaen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3240888en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue14en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000270670200091-
dc.citation.woscount5-
Appears in Collections:Articles


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