標題: Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica
作者: Shieh, Jia-Min
Huang, Jung Y.
Yu, Wen-Chien
Huang, Jian-Da
Wang, Yi-Chao
Chen, Ching-Wei
Wang, Chao-Kei
Huang, Wen-Hsien
Cho, An-Thung
Kuo, Hao-Chung
Dai, Bau-Tong
Yang, Fu-Liang
Pan, Ci-Ling
光電工程學系
Department of Photonics
公開日期: 5-Oct-2009
摘要: We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240888]
URI: http://dx.doi.org/10.1063/1.3240888
http://hdl.handle.net/11536/6573
ISSN: 0003-6951
DOI: 10.1063/1.3240888
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 14
結束頁: 
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