標題: MOS magnetic current sensor based on standard CMOS process
作者: Yang, HM
Lei, TF
Huang, YC
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: magnetic sensors
公開日期: 27-三月-1997
摘要: A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.
URI: http://hdl.handle.net/11536/657
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 33
Issue: 7
起始頁: 601
結束頁: 602
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WU00100041.pdf