標題: Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for NOR-Type Flash Memory
作者: Wang, Kuan-Ti
Chao, Tien-Sheng
Chiang, Tsung-Yu
Wu, Woei-Cherng
Kuo, Po-Yi
Wu, Yi-Hong
Lu, Yu-Lun
Liao, Chia-Chun
Yang, Wen-Luh
Lee, Chien-Hsing
Hsieh, Tsung-Min
Liou, Jhyy-Cheng
Wang, Shen-De
Chen, Tzu-Ping
Chen, Chien-Hung
Lin, Chih-Hung
Chen, Hwi-Huang
電子物理學系
Department of Electrophysics
關鍵字: Memory;programming mechanism;wrapped-select-gate SONOS (WSG SONOS)
公開日期: 1-Nov-2009
摘要: For the first time, a programming mechanism for conventional source-side injection (SSI) (normal mode), substrate-bias enhanced SSI (body mode), and dynamic-threshold SSI (DTSSI) (DT mode) of a wrapped-select-gate SONOS memory is developed with 2-D Poisson equation and hot-electron simulation and programming characteristic measurement for NOR Flash memory. Compared with traditional SSI, DTSSI mechanisms are determined in terms of lateral acceleration electric field and programming current (I(PGM)) in the neutral gap region, resulting in high programming efficiency. Furthermore, the lateral electric field intersects the vertical electric field, indicating that the main charge injection point is from the end edge of the gap region close to the word gate.
URI: http://dx.doi.org/10.1109/LED.2009.2031601
http://hdl.handle.net/11536/6533
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2031601
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 11
起始頁: 1206
結束頁: 1208
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