標題: Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
作者: Lin, Horng-Chih
Chang, Kai-Hsiang
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Alternating-current (ac) stress;hot carriers (HCs);reliability;thin-film transistors (TFTs)
公開日期: 1-十一月-2009
摘要: In this paper, we employed a new test structure to characterize the alternating-current (ac) hot-carrier (HC)induced degradation in poly-Si thin-film transistors. High sensitivity in detecting the damage and the capability of directly resolving the damage location are demonstrated due to the unique feature of the test structure. Our results indicate that the major degradation is induced in the turn-off stages of the ac-stress signal when applied to the gate and in the turn-on stages of the ac-stress signal when applied to the drain. The availability and energy relaxation of channel HCs are considered to explain the experimental findings.
URI: http://dx.doi.org/10.1109/TED.2009.2030871
http://hdl.handle.net/11536/6522
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2030871
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 11
起始頁: 2664
結束頁: 2669
顯示於類別:期刊論文


文件中的檔案:

  1. 000271019500037.pdf