標題: A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits
作者: Wu, Chung-Yu
Lo, Yi-Kai
Chen, Min-Chiao
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;electrostatic discharge (ESD);low-noise amplifier (LNA);ultra-wide band (UWB)
公開日期: 1-Nov-2009
摘要: A low-power fully integrated low-noise amplifier (LNA) with an on-chip electrostatic-static discharge (ESD) protection circuit for ultra-wide band (UWB) applications is presented. With the use of a common-gate scheme with a g(m)-boosted technique, a simple input matching network, low noise figure (NF), and low power consumption can be achieved. Through the combination of an input matching network, an ESD clamp circuit has been designed for the proposed LNA circuit to enhance system robustness. The measured results show that the fabricated LNA can be operated over the full UWB bandwidth of 3.0 to 10.35 GHz. The input return loss (S(11)) and output return loss (S(22)) are less than -8.3 dB and -9 dB, respectively. The measured power gain (S(21)) is 11 +/- 1.5 dB, and the measured minimum NF is 3.3 dB at 4 GHz. The dc power dissipation is 7.2 mW from a 1.2 V supply. The chip area, including testing pads, is 1.05 mm x 0.73 mm.
URI: http://dx.doi.org/10.1109/LMWC.2009.2032022
http://hdl.handle.net/11536/6504
ISSN: 1531-1309
DOI: 10.1109/LMWC.2009.2032022
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 19
Issue: 11
起始頁: 737
結束頁: 739
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