標題: Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition
作者: Huang, Yen-Chin
Li, Zhen-Yu
Weng, Li-Wei
Uen, Wu-Yih
Lan, Shan-Ming
Liao, Sen-Mao
Lin, Tai-Yuan
Huang, Yu-Hsiang
Chen, Jian-Wen
Yang, Tsun-Neng
Chiang, Chin-Chen
光電工程學系
Department of Photonics
公開日期: 1-Nov-2009
摘要: Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56 to 3.35 mu mol/min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG = 2.79 mu mol/min. This film also revealed a lowest resistivity of 4.54 x 10(-4) Omega cm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12 K demonstrated the Burstein Moss shift of PL line from 3.365 to 3.403 eV and a line broadening from 100 to 165 meV as the TEG flow rate varied from 0.56 to 2.79 mu mol/min. This blueshift behavior of PL spectra from ZnO: Ga films features the degeneracy of semiconductor, which helps to recognize the enhancing of transparency and conductivity of ZnO films fabricated by AP-MOCVD using Ga-doping technique. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3212895]
URI: http://dx.doi.org/10.1116/1.3212895
http://hdl.handle.net/11536/6500
ISSN: 0734-2101
DOI: 10.1116/1.3212895
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 27
Issue: 6
起始頁: 1260
結束頁: 1265
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