標題: Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs
作者: Lin, Chia-Sheng
Chen, Ying-Chung
Chang, Ting-Chang
Chen, Shih-Ching
Jian, Fu-Yen
Li, Hung-Wei
Chen, Te-Chih
Weng, Chi-Feng
Lu, Jin
Hsu, Wei-Che
光電工程學系
Department of Photonics
關鍵字: Displays;low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)
公開日期: 1-Nov-2009
摘要: In this letter, a mechanism of anomalous capacitance in p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated. In general, the effective capacitance was only the overlap region and independent with the frequency in LTPS TFTs under the OFF state. However, our experimental results reveal that the capacitance was related with the leakage current and that it was dependent with the measurement frequencies when operated at the OFF-state region. The increase of the capacitance value is verified to be due to the increase of the electron capacitance originating from a gate-induced drain-leakage (GIDL) one. Nevertheless, the GIDL-induced electron capacitance can be suppressed by employing band-to-band hot electron stress.
URI: http://dx.doi.org/10.1109/LED.2009.2031504
http://hdl.handle.net/11536/6494
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2031504
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 11
起始頁: 1179
結束頁: 1181
Appears in Collections:Articles


Files in This Item:

  1. 000271151500021.pdf