標題: Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
作者: Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gate-all-around (GAA);MOSFET;quantum effects;short-channel effect
公開日期: 1-Nov-2009
摘要: This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.
URI: http://dx.doi.org/10.1109/TED.2009.2030714
http://hdl.handle.net/11536/6471
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2030714
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 11
起始頁: 2720
結束頁: 2725
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