標題: Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma
作者: Wang, FS
Huang, CY
Cheng, HC
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: polycrystalline silicon;thin-film transistor;N2O plasma;defect passivation;hot-carrier reliability
公開日期: 1-四月-1997
摘要: A novel defect passivation process in polycrystalline silicon (poly-Si) thin-him transistors (TFTs) utilizing nitrous oxide (N2O) plasma has been performed to significantly improve the electrical characteristics of poly-Si TFTs, For example, the on/off current ratio increased to 6.58x10(6); the threshold voltage decreased to 0.55V, and a the field effect mobility increased to 48.2 cm(2)/Vs. The distribution of N incorporated in this oxide and these poly-Si films was examined by means of secoudary ion mass spectroscopy (SIMS) and Auger-electron spectroscopy (AES). It is believed that the nitrogen radicals which dissociated from the N2O gas as well as the hydrogen radicals with dissociated from the residual H2O can both diffuse into the active poly-Si layer to passivate the grain-boundary defect states and accumulate at the gale SiO2/poly-Si interlace lo reduce the interface state density. Thus, the hot-carrier reliability of TFTs M-as also enhanced after the N2O plasma treatments.
URI: http://dx.doi.org/10.1143/JJAP.36.2028
http://hdl.handle.net/11536/645
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.2028
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 4A
起始頁: 2028
結束頁: 2031
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WY79900008.pdf