In-situ Fabrication of High Tc Superconducting Thin Film Devices by Selective Epitaxial Growth
|關鍵字:||選擇性磊晶成長;高溫超導;薄膜元件;即時製備;超導量子干涉元件;selective epitaxial growth;high-Tc superconductor (HTS);thin film device;in-situ fabrication;SQUID|
A novel process, highly compatible to the current semiconductor technologies, is developed to fabricate high-Tc superconducting(HTS) devices in-situ. YBa2Cu3O7-d(YBCO) films deposited on substrates masked by thin Ti layers exhibits excellent selective epitaxial characteristics. The YBCO grown directly on unmasked areas of SrTiO3 substrates showed undegraded superconductivity, while that grown upon Ti masked areas became insulating. By combining this "selective epitaxial growth (SEG)" process with the commonly used lift-off technique, a patterned SQUID with a pick-up coil device structure was successfully demonstrated. The results show that the devices have well-defined edges and drastically different appearances in surface morphology between different areas. It is anticipated that the current process can have extremely high potential in obtaining devices with very fine feature sizes and complex structures in-situ without encountering the fatal damages in the superconducting films frequently suffered from etching and photolithographical process.
|Appears in Collections:||Thesis|