標題: Hard repulsive barrier in hot adatom motion during dissociative adsorption of oxygen on Ag(100)
作者: Hsieh, Ming-Feng
Lin, Deng-Sung
Gawronski, Heiko
Morgenstern, Karina
物理研究所
Institute of Physics
關鍵字: adsorbed layers;adsorption;dissociation;oxygen;scanning tunnelling microscopy;silver
公開日期: 7-十一月-2009
摘要: Random pairing simulation and low temperature scanning tunneling microscopy (STM) are used to investigate the detailed O(2) dissociative adsorption processes at 200 K for various coverages. The distribution of oxygen adatoms shows a strong repulsion between the adsorbates with a radius of similar to 0.8 nm. The comparison between STM results and simulation reveals two prominent pairing distances of 2 and 4 nm and their branching ratio is about 2:1. These findings shed new light on the origin of the large intrapair distances found and on the process behind the empirical "eight-site rule.".
URI: http://dx.doi.org/10.1063/1.3258849
http://hdl.handle.net/11536/6438
ISSN: 0021-9606
DOI: 10.1063/1.3258849
期刊: JOURNAL OF CHEMICAL PHYSICS
Volume: 131
Issue: 17
結束頁: 
顯示於類別:期刊論文


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