Title: Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires
Authors: Lin, Y. F.
Wu, Z. Y.
Lin, K. C.
Chen, C. C.
Jian, W. B.
Chen, F. R.
Kai, J. J.
Department of Electrophysics
Issue Date: 11-Nov-2009
Abstract: Several systems of metallic metal-oxide nanowires (NWs), including pure RuO(2) and as-implanted and annealed Ru(0.98)Cu(0.02)O(2) and Ru(0.93)Cu(0.07)O(2) NWs, have been employed in two-probe electrical characterizations by using a transmission electron microscope-scanning tunneling microscope technique with a gold tip. Thermal, mechanical, and electron beam exposing treatments are consecutively applied to reduce the electrical contact resistance, generated from the interface between the NW and the gold tip, so as to evaluate the intrinsic NW resistance. It is found that the residual contact resistance cannot be entirely removed. For each system of metallic metal-oxide NWs, several tens of NWs are applied to electrical characterizations and the total resistances unveil a linear dependence on the ratio of the length to the area of the NWs. As a result, the average resistivity and the contact resistance of the metallic metal-oxide NWs could be evaluated at room temperatures. The average resistivities of pure RuO(2) NWs agree well with the results obtained from standard two- and four-probe electrical-transport measurements. In addition, the as-implanted Cu-RuO(2) NWs reveal disordered crystalline structures in high-resolution TEM images and give higher resistivities in comparison with that of pure RuO(2) NWs. The residual contact resistances of all kinds of metallic metal-oxide NWs unveil, more surprisingly, an approximation value of several kilohms, even though the average resistivities of these NWs change by more than one order of magnitude. It is argued that the ductile gold tip makes one or more soft contacts on the stiff metal-oxide NWs with nanometer roughness and the nanocontacts on the NWs contribute to the electrical contact resistance.
URI: http://dx.doi.org/10.1088/0957-4484/20/45/455401
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/45/455401
Volume: 20
Issue: 45
End Page: 
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