標題: Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio
作者: Chao, Yu-Chiang
Lin, Yi-Cheng
Dai, Min-Zhi
Zan, Hsiao-Wen
Meng, Hsin-Fei
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
關鍵字: ageing;organic semiconductors;plasma materials processing;polymers;transistors
公開日期: 16-十一月-2009
摘要: Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10(4) is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.
URI: http://dx.doi.org/10.1063/1.3261749
http://hdl.handle.net/11536/6418
ISSN: 0003-6951
DOI: 10.1063/1.3261749
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 20
結束頁: 
顯示於類別:期刊論文


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  1. 000272052200065.pdf