標題: TCAD/Physics-Based Analysis of High-Density Dual-BOX FD/SOI SRAM Cell With Improved Stability
作者: Kim, Keunwoo
Kuang, Jente B.
Gebara, Fadi H.
Ngo, Hung C.
Chuang, Ching-Te
Nowka, Kevin J.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FD/SOI device;mix-mode simulator;read stability;substrate bias
公開日期: 1-十二月-2009
摘要: This paper presents a new SRAM cell using a global back-gate bias scheme in dual buried-oxide (BOX) FD/SOI CMOS technologies. The scheme uses a single global back-gate bias for all cells in the entire columns or subarray, thereby reducing the area penalty. The scheme improves 6T SRAM standby leakage, read stability, write ability, and read/write performance. The basic concept of the proposed scheme is discussed based on physical analysis/equation to facilitate device parameter optimization for SRAM cell design in back-gated FD/SOI technologies. Numerical 2-D mixed-mode device/circuit simulation results validate the merits and advantages of the proposed scheme.
URI: http://dx.doi.org/10.1109/TED.2009.2030657
http://hdl.handle.net/11536/6383
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2030657
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 12
起始頁: 3033
結束頁: 3040
顯示於類別:期刊論文


文件中的檔案:

  1. 000271951700020.pdf