標題: Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter
作者: Cheng, Shiau-Shin
Chen, Jia-Hao
Chen, Guan-Yuan
Kekuda, Dhananjay
Wu, Meng-Chyi
Chu, Chih-Wei
光電工程學系
Department of Photonics
關鍵字: Vertical-type;Junction;Transition metal oxide;Inverter
公開日期: 1-Dec-2009
摘要: In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO(3)) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO(3)/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 mu A at V(B) = -5 V and a current ON/OFF ratio of 10(3). Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2009.08.023
http://hdl.handle.net/11536/6370
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.08.023
期刊: ORGANIC ELECTRONICS
Volume: 10
Issue: 8
起始頁: 1636
結束頁: 1640
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