Title: Shape dependent carrier dynamics in InAs/GaAs nanostructures
Authors: Lin, C. H.
Ling, H. S.
Su, S. K.
Lin, S. D.
Lee, C. P.
Sun, K. W.
應用化學系
電子工程學系及電子研究所
Department of Applied Chemistry
Department of Electronics Engineering and Institute of Electronics
Keywords: dark states;excitons;gallium compounds;ground states;III-V semiconductors;indium compounds;nanostructured materials;photoluminescence;self-assembly;semiconductor quantum dots;time resolved spectra
Issue Date: 1-Dec-2009
Abstract: We present systematic experimental studies of the temperature dependence of continuous wave and time-resolved photoluminescence spectroscopy in self-assembled InAs/GaAs nanostructures as the shape of quantum structures evolved from dot to ring. The carrier dynamics show strong dependence on the geometrical shape of the nanostructures under investigation. An increase in photoluminescence decay time of the excited and ground states is observed as the shape of nanostructures changed from dot, volcano, to ring. It is attributed to the carrier thermalization between the dark and ground states. The photoluminescence excitation spectra of the quantum rings reveal resonances related to the dark states. A rate equation model is proposed to interpret the observed carrier dynamics.
URI: http://dx.doi.org/10.1063/1.3267851
http://hdl.handle.net/11536/6366
ISSN: 0021-8979
DOI: 10.1063/1.3267851
Journal: JOURNAL OF APPLIED PHYSICS
Volume: 106
Issue: 11
End Page: 
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