標題: High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
作者: Su, N. C.
Wang, S. J.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Amorphous indium-gallium-zinc oxide (a-IGZO);equivalent oxide thickness;HfLaO;high-k;thin-film transistors
公開日期: 1-十二月-2009
摘要: In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V(T) of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm(2)/V . s, and large I(on)/I(off) ratio of 5 x 10(7). These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
URI: http://dx.doi.org/10.1109/LED.2009.2033392
http://hdl.handle.net/11536/6353
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2033392
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 12
起始頁: 1317
結束頁: 1319
顯示於類別:期刊論文


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