The Study of Defects in Te-doped AlInP
Deep level transient spectroscopy measurements were performed to study the defects in Te-doped AlInP, grown by MOCVD. By using pn junction structure, both minority and majority carrier traps can be observed. Here, the V/III mole ratio effect and Te-doping concentration effect are considered. First, the majority carrier traps existed in Te-doped AlInP grown by different V/III mole ratio conditions have been stuied. One majority carrier trap exists in AlInP grown by V/IIII mole ration 160 and 120.The activation energy of the majority carrier trap is 0.2 eV and this deep level has been verified as a bulk defect by defect-distribution study:Besides the deep level exists in the same type as above, another majority carrier trap, which activation energy is 0.648 eV, is found in Te-doped AlInP grown by V/III ole ration 80.The more deep level existed in AlInP should result from phosphorus vacancy. Second, the doping concentration effect has been observed. The majority carrier trap concentration in Te-doped AlInP grown by V/III mole ration 120 is related to Te-doping concentration, indicationg the deep level concentration increasing with proomoting doping concentration. Thus, the majority carrier trap which activation energy is 0.24 eV is a dopant-related defect. Finally, the minority carrier trap in AlInP grown by V/III mole ratio 160 has been studied. Only one Minority carrier trap exists in AlInP and this deep level activation energy is 0.25 eV. From defect-distribution study, the minority carrier trap has been verified as a bulk defect.
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