標題: New Ballasting Layout Schemes to Improve ESD Robustness of I/O Buffers in Fully Silicided CMOS Process
作者: Ker, Ming-Dou
Chen, Wen-Yi
Shieh, Wuu-Trong
Wei, I-Ju
電機學院
College of Electrical and Computer Engineering
關鍵字: Ballast resistance;electrostatic discharge (ESD);ESD protection;input/output (I/O) buffer;silicidation
公開日期: 1-十二月-2009
摘要: Silicidation has been reported to result in substantial negative impact on the electrostatic discharge (ESD) robustness of MOS field-effect transistors. Although silicide blocking (SB) is a useful method to alleviate ESD degradation from silicidation, it requires additional mask and process steps to somehow increase the fabrication cost. In this paper, two new ballasting layout schemes to effectively improve the ESD robustness of input/output (I/O) buffers with fully silicided NMOS and PMOS transistors have been proposed. Ballasting technique in layout is a cost-effective method to enhance the ESD robustness of fully silicided devices. Experimental results from real IC products have confirmed that the new ballasting layout schemes can successfully increase the HBM ESD robustness of fully silicided I/O buffers from the original 1.5 kV to over 6 kV without using the additional SB mask.
URI: http://dx.doi.org/10.1109/TED.2009.2031003
http://hdl.handle.net/11536/6338
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2031003
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 12
起始頁: 3149
結束頁: 3159
顯示於類別:期刊論文