標題: In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP
作者: Chin, A
Liao, CC
Tsai, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-1997
摘要: The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.
URI: http://dx.doi.org/10.1109/55.563314
http://hdl.handle.net/11536/633
ISSN: 0741-3106
DOI: 10.1109/55.563314
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 4
起始頁: 157
結束頁: 159
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WN76400010.pdf