標題: Label-free biosensing of a gene mutation using a silicon nanowire field-effect transistor
作者: Wu, Chi-Chang
Ko, Fu-Hsiang
Yang, Yuh-Shyong
Hsia, Der-Ling
Lee, Bo-Syuan
Su, Ting-Siang
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
生物科技學系
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Biological Science and Technology
關鍵字: Nanowire;Biosensor;Gene mutation sensing;BRAF
公開日期: 15-Dec-2009
摘要: We have developed a silicon nanowire field-effect transistor (NWFET) that allows deoxyribonucleic acid (DNA) biosensing. The nanowire (NW) was fabricated on a silicon-on-insulator wafer to provide effective ohmic contact. The NWFET sensor displayed n-channel depletion characteristics. To demonstrate the sensing capacity of the NWFET, we employed the BRAF(V599E) mutation gene, which correlates to the occurrence of cancers, as the target DNA sequence. The threshold voltage of the NWFET increased when the mutation gene was hybridized with the capture DNA strands on the nanowire, and decreased to the original level after de-hybridization of the gene. The shift in the drain current-gate voltage (ID-VG) curves revealed that the electrical signal had a logarithmic relationship with respect to the concentration of the mutation gene of up to six orders of magnitude, with the detection limit in the sub-femtomolar level. The detection results of mismatched DNA sequences, including one- and five-base-mismatched DNA strands, could be distinguished from complementary DNA gene by this sensor. The excellent electrical results obtained using this label-free NWFET sensor suggest that such devices might be potentially useful tools for biological research and oncogene screening. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.bios.2009.08.031
http://hdl.handle.net/11536/6314
ISSN: 0956-5663
DOI: 10.1016/j.bios.2009.08.031
期刊: BIOSENSORS & BIOELECTRONICS
Volume: 25
Issue: 4
起始頁: 820
結束頁: 825
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