標題: Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing
作者: Sung, Chao-Feng
Kekuda, Dhananjay
Chu, Li Fen
Lee, Yuh-Zheng
Chen, Fang-Chung
Wu, Meng-Chyi
Chu, Chih-Wei
交大名義發表
National Chiao Tung University
公開日期: 18-Dec-2009
摘要: C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm(2) V(-1) s(-1) and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.
URI: http://dx.doi.org/10.1002/adma.200901215
http://hdl.handle.net/11536/6308
ISSN: 0935-9648
DOI: 10.1002/adma.200901215
期刊: ADVANCED MATERIALS
Volume: 21
Issue: 47
起始頁: 4845
結束頁: +
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