標題: Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
作者: Feng, Li-Wei
Chang, Chun-Yen
Chang, Ting-Chang
Tu, Chun-Hao
Wang, Pai-Syuan
Chang, Yao-Feng
Chen, Min-Chen
Huang, Hui-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: elemental semiconductors;germanium;materials preparation;nanostructured materials;random-access storage;sputter deposition;titanium compounds;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 28-十二月-2009
摘要: We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.
URI: http://dx.doi.org/10.1063/1.3279131
http://hdl.handle.net/11536/6304
ISSN: 0003-6951
DOI: 10.1063/1.3279131
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 26
結束頁: 
顯示於類別:期刊論文


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  1. 000273216900033.pdf