|標題:||Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO(2) about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO(3):H(2)O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO(2) film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO(2), a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO(2) layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.|
|期刊:||JOURNAL OF THE ELECTROCHEMICAL SOCIETY|
|Appears in Collections:||Articles|