Title: Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
Authors: Hu, Chih-Wei
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Yang-Dong
Lin, Chao-Cheng
Chen, Min-Chen
Lin, Jian-Yang
Sze, Simon M.
Tseng, Tseung-Yuen
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2010
Abstract: In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO(2) about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO(3):H(2)O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO(2) film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO(2), a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO(2) layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
URI: http://dx.doi.org/10.1149/1.3285172
ISSN: 0013-4651
DOI: 10.1149/1.3285172
Volume: 157
Issue: 3
Begin Page: H332
End Page: H336
Appears in Collections:Articles