標題: Low-lying exciton states in a type-II broken-gap quantum well structure: A variation-basis-set approach
作者: Chu, CS
Chu, KD
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
公開日期: 1-四月-1997
摘要: The exciton binding energy and the low-lying exciton states in a type-II broken-gap quantum well structure are studied. The conduction electron and the hole that form the exciton are spatially separated and are each confined by a quantum well. A variation-basis-set approach is proposed in which a set of variation basis set wavefunctions are constructed from the eigenstates of a variation Hamiltonian. The calculation of the exciton states can be carried out systematically and the accuracy of the state energies can be estimated. Numerical examples are presented, showing the rapid convergence of the excitonic levels with respect to the size of the variation basis set in and beyond the small well width regime. The effective binding energies for the states are found to increase with the decreasing of the well width. The low-lying exciton states in and beyond the small well width regime are presented.
URI: http://hdl.handle.net/11536/628
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 35
Issue: 2
起始頁: 164
結束頁: 173
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WR51700007.pdf