標題: A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
作者: Huang, Jui-Chien
Lin, Yueh-Chin
Tseng, Yu-Ling
Chen, Ke-Shian
Lu, Po-Chin
Lin, Mong-E
Chang, Edward-Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A Cu-metallized InGaP/GaAs heterojunction bipolar transistor (HBT) using a Pd/Ge/Cu n-type ohmic contact, a Pt/Ti/Pt/Cu p-type ohmic contact, and a Ti/Pt/Cu interconnect has been fabricated for power applications. The 4 x 20 mu m(2) HBT had an output power of 11.25 dBm with a power-added efficiency of 35.1%. After applying current-accelerated stress for 24 h, the current gain remained larger than 125. The device was also annealed at 200 degrees C for 24 h, and showed a slight decrease in output power from 10.06 to 9.83 dBm. The results demonstrated that reliable Cu metallization can be used for fabricating InGaP/GaAs HBTs for power applications. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6277
http://dx.doi.org/10.1143/JJAP.49.020215
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.020215
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 2
Appears in Collections:Articles


Files in This Item:

  1. 000275665700015.pdf