標題: Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor
作者: Chang, Tsu
Kao, Hsuan-Ling
Chen, Y. J.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mu m asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mu m MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6275
http://dx.doi.org/10.1143/JJAP.49.034201
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.034201
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 3
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