標題: A novel thin-film transistor with vertical offset structure
作者: Lin, CW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: amorphous silicon;microcrystalline silicon;vertical offset;transfer characteristics;thin film transistor
公開日期: 1-四月-1997
摘要: A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.
URI: http://dx.doi.org/10.1143/JJAP.36.2032
http://hdl.handle.net/11536/626
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.2032
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 4A
起始頁: 2032
結束頁: 2043
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WY79900009.pdf