標題: 深次微米逆離子佈植p通道金氧半場效電晶體之參數萃取及元件模式的新技術
= New techniques for parameter extraction and device models of deep-submicrometer counter-implanted p-MOSFET's
作者: 吳健民
吳慶源
電子研究所
公開日期: 1996
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT856430117
http://hdl.handle.net/11536/62552
Appears in Collections:Thesis