標題: ESD Avoiding Circuits for Solving OTP Memory Falsely Programmed Issues
作者: Huang, Shao-Chang
Chen, Ke-Horng
Chen, Hsin-Ming
Ho, Ming-Chou
Shen, Rick Shih-Jye
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 2010
摘要: One-time program (OTP) memories are programmed for memory design without electrostatic discharge (ESD) stresses. However, in reality, ESD events are not selective and thus ESD currents can falsely program OTP memory cells. Many integrated circuit (IC) designers focus only on improving OTP memory control architectures to avoid memory being falsely programmed without mentioning the ESD-introduced memory errors. This article investigates a new ESD architecture and novel ESD avoiding circuits, aiming to solve ESD-introduced memory falsely programmed issues. It should be noted that this article focuses on ESD circuit designs to protect OTP memory instead of OTP control architectures. With such new ESD schemes, our prototype circuits have demonstrated that memory cells can indeed be programmed at IC program mode without ESD stresses.
URI: http://hdl.handle.net/11536/6245
http://dx.doi.org/10.1109/MCAS.2010.936784
ISSN: 1531-636X
DOI: 10.1109/MCAS.2010.936784
期刊: IEEE CIRCUITS AND SYSTEMS MAGAZINE
Volume: 10
Issue: 2
起始頁: 30
結束頁: 39
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