Title: High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
Authors: Hu, Chih-Wei
Chang, Ting-Chang
Tu, Chun-Hao
Huang, Yu-Hao
Lin, Chao-Cheng
Chen, Min-Chen
Huang, Fon-Shan
Sze, Simon M.
Tseng, Tseung-Yuen
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2010
Abstract: We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO(2) pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO(2) dielectric layer. Moreover, related reliability characteristics have been extracted.
URI: http://dx.doi.org/10.1149/1.3271023
ISSN: 1099-0062
DOI: 10.1149/1.3271023
Volume: 13
Issue: 3
Begin Page: H49
End Page: H51
Appears in Collections:Articles