標題: Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect
作者: Lin, Chia-Sheng
Chen, Ying-Chung
Chang, Ting-Chang
Li, Hung-Wei
Hsu, Wei-Che
Chen, Shih-Ching
Tai, Ya-Hsiang
Jian, Fu-Yen
Chen, Te-Chih
Tu, Kuan-Jen
Wu, Hsing-Hua
Chen, Yi-Chan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: electron traps;electron-hole recombination;elemental semiconductors;grain boundaries;interface states;leakage currents;silicon;thin film transistors;tunnelling
公開日期: 2010
摘要: This work investigates negative bias temperature instability (NBTI) in low temperature polycrystalline silicon thin film transistors (LTPS TFTs) in a darkened and in an illuminated environment of different light intensities. Experimental results reveal that the generations of interface state density (N(it)) are identical under various illuminated intensity NBTI stresses. Nevertheless, the degradation of the grain boundary trap (N(trap)) under illumination was more significant than that for the darkened environment, with degradation increasing as illumination intensity increases. This phenomenon is mainly caused by the extra number of holes generated during the illuminated NBTI stress. The increased N(trap) degradation leads to an increase in the darkened environment leakage current. This indicates that more traps are generated in the drain junction region than from carrier tunneling via the trap, resulting in leakage current. Conversely, an increase in N(trap) degradation results in a decrease in the photoleakage current. This indicates that the number of recombination centers increases in the poly-Si bulk, affecting photosensitivity in LTPS TFTs.
URI: http://hdl.handle.net/11536/6191
http://dx.doi.org/10.1149/1.3265456
ISSN: 0013-4651
DOI: 10.1149/1.3265456
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 2
起始頁: J29
結束頁: J33
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