|標題:||Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors|
|作者:||Cheng, C. H.|
Deng, C. K.
Hsu, H. H.
Chen, P. C.
Liou, B. H.
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
|摘要:||We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.|
|期刊:||JOURNAL OF THE ELECTROCHEMICAL SOCIETY|
|Appears in Collections:||Articles|