Title: Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
Authors: Cheng, C. H.
Deng, C. K.
Hsu, H. H.
Chen, P. C.
Liou, B. H.
Chin, Albert
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2010
Abstract: We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3439668
ISSN: 0013-4651
DOI: 10.1149/1.3439668
Volume: 157
Issue: 8
Begin Page: H821
End Page: H824
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