標題: Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
作者: Cheng, C. H.
Deng, C. K.
Hsu, H. H.
Chen, P. C.
Liou, B. H.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2010
摘要: We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3439668
http://hdl.handle.net/11536/6187
ISSN: 0013-4651
DOI: 10.1149/1.3439668
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 8
起始頁: H821
結束頁: H824
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