標題: The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
作者: Wong, Yuen-Yee
Chang, Edward Yi
Yang, Tsung-Hsi
Chang, Jet-Rung
Ku, Jui-Tai
Hudait, Mantu K.
Chou, Wu-Ching
Chen, Micheal
Lin, Kung-Liang
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: aluminium compounds;Coulomb blockade;defect states;edge dislocations;electron mobility;gallium compounds;III-V semiconductors;leakage currents;molecular beam epitaxial growth;plasma deposition;quantum Hall effect;Schottky barriers;semiconductor epitaxial layers;semiconductor growth;semiconductor heterojunctions;two-dimensional electron gas;wide band gap semiconductors
公開日期: 2010
摘要: The role played by different types of threading dislocations (TDs) on the electrical properties of AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy (MBE) was investigated. Samples with different defect structures and densities were prepared and measurements were taken from the same sample to study the correlative behavior of various TDs. From the Hall measurement, the electron mobility in two-dimensional electron gas channel was mainly controlled by the edge dislocation, which has a dominant amount in the material. The edge TDs acted as Coulomb scattering centers inside the channel and reduces the carrier mobility and increased its resistance. Screw TDs played a much significant role than edge TDs in determining the reverse-bias leakage current of Schottky barrier diodes. Leakage current is affected slightly by the reduction of free carrier density in the channel for samples with a higher edge TD density, but screw TD, which acted as the current leakage path, was more deleterious to the reverse-bias leakage current of AlGaN/GaN structure. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3392365] All rights reserved.
URI: http://hdl.handle.net/11536/6185
http://dx.doi.org/10.1149/1.3392365
ISSN: 0013-4651
DOI: 10.1149/1.3392365
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 7
起始頁: H746
結束頁: H749
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