標題: Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT
作者: Lu, Chih-Cheng
Huang, Jiun-Jia
Luo, Wun-Cheng
Hou, Tuo-Hung
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bending;electron mobility;elemental semiconductors;interface states;internal stresses;MOSFET;silicon
公開日期: 2010
摘要: This paper compares and analyzes the strained negative channel field effect transistor (nFET) device performance and the channel mobility behavior obtained by the stress memorization technique (SMT) using two different types of nitride films. These nitride film properties and wafer bowing during SMT fabrication are investigated. The electrical properties of SMT strained nFET devices including current-voltage characteristics, transconductance, carrier mobility, and interface state (D(it)) are also analyzed. Although SMT nitride strain can enhance electron mobility, it is critical to control the nitride properties and its hydrogen content to minimize electron mobility degradation due to interface-state generation. Thus, a simple view of the essential physics of mobility enhancement in SMT strained nFETs has been provided. Results in this work also provide guidance to further nFET performance enhancement in the ever-more challenging device targets of future technology generations. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3416923] All rights reserved.
URI: http://hdl.handle.net/11536/6184
http://dx.doi.org/10.1149/1.3416923
ISSN: 0013-4651
DOI: 10.1149/1.3416923
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 7
起始頁: H705
結束頁: H710
Appears in Collections:Articles


Files in This Item:

  1. 000278182600062.pdf