Title: High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM Capacitors
Authors: Huang, C. C.
Cheng, C. H.
Lin, C. W.
Chang, L. M.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2010
Abstract: In this paper, the impact of Al(2)O(3) incorporation on the electrical characteristics of the SrTiO(3) (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al(2)O(3)-doped STO (STO: Al(2)O(3) = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al(2)O(3) incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al(2)O(3)-doped STO, and HfO(2)-doped STO MIM capacitors. Results revealed that STO MIM and HfO(2)-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al(2)O(3)-doped STO MIM is much lower than those of both the STO MIM and HfO(2)-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al(2)O(3)-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3368671
ISSN: 0013-4651
DOI: 10.1149/1.3368671
Volume: 157
Issue: 6
Begin Page: H624
End Page: H627
Appears in Collections:Articles