標題: Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate
作者: Chang, Shih-Pang
Lu, Tien-Chang
Zhuo, Li-Fu
Jang, Chung-Ying
Lin, Da-Wei
Yang, Hung-Chih
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: carrier density;current density;gallium compounds;III-V semiconductors;indium compounds;light emitting diodes;photoluminescence;polarisation;semiconductor quantum wells;wide band gap semiconductors
公開日期: 2010
摘要: The low droop nonpolar m-plane InGaN/GaN light emitting diode (LED) has been fabricated and investigated. The external quantum efficiency for a 300x300 mu m square LED chip only drops about 18% from maximum at an operation current of 22 A/cm(2) (20 mA) to 330 A/cm(2) (300 mA) dc operations at room temperature. In addition, the internal quantum efficiency has been extracted by temperature-dependent photoluminescence measurements, and there is no droop observed as the carrier density increases. The small droop in efficiency of m-plane LEDs could be due to the lack of polarization effects that enhances the carrier confinement under high current density operation. The polarization anisotropy is clearly observed in the m-plane LED, and the degree of polarization is 68%.
URI: http://hdl.handle.net/11536/6182
http://dx.doi.org/10.1149/1.3327909
ISSN: 0013-4651
DOI: 10.1149/1.3327909
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 5
起始頁: H501
結束頁: H503
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